2SK1960 Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
The 2SK1960 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
FEATURES
• Gate can be driven by 1.5 V
• Low ON resistance
RDS(on) = 0.8 Ω MAX. @ VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.2 Ω MAX. @ VGS = 4.0 V, ID = 1.5 A
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производитель
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology