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2SK1960 Даташит - NEC => Renesas Technology

2SK1960-T1 image

Номер в каталоге
2SK1960

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NEC
NEC => Renesas Technology 

The 2SK1960 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.


FEATURES
• Gate can be driven by 1.5 V
• Low ON resistance
   RDS(on) = 0.8 Ω MAX. @ VGS = 1.5 V, ID = 0.1 A
   RDS(on) = 0.2 Ω MAX. @ VGS = 4.0 V, ID = 1.5 A

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производитель
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology

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