2SK170(1997) Даташит - Toshiba
производитель
Toshiba
LOW NOISE AUDIO AMPLIFIER APPLICATIONS
• Recommended for first stages of EQ and M.C. Head Amplifiers.
• High |Yfs|: |Yfs| = 22 mS (Typ.)
(VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High Breakdown Voltage: VGDS = −40 V
• Low Noise: En = 0.95 nV/Hz1/2 (Typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High Input Impedance: IGSS = −1 nA (Max.) (VGS = −30 V)
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производитель
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
