2SK1530 Даташит - Toshiba
производитель
Toshiba
High-Power Amplifier Application
• High breakdown voltage : VDSS = 200 V
• High forward transfer admittance : |Yfs| = 5.0 S (typ.)
• Complementary to 2SJ201
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
