DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance:
  RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A)
  RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
  Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode