2SJ574(2014) Даташит - Renesas Electronics
производитель
Renesas Electronics
Features
• Low on-resistance
RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)
RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)
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производитель
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
P-Channel MOS FET / High-Speed Switching
NEC => Renesas Technology
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NEC => Renesas Technology
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
