2SJ557-T1B Даташит - NEC => Renesas Technology
Номер в каталоге
2SJ557-T1B
производитель

NEC => Renesas Technology
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
Номер в каталоге
Компоненты Описание
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производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology