2SJ530 Даташит - Renesas Electronics
производитель

Renesas Electronics
Description
High speed power switching
FEATUREs
• Low on-resistance RDS (on) = 0.08 Ω typ.
• 4 V gate drive devices.
• High speed switching.
Page Link's:
1
2
3
4
5
6
7
8
9
Номер в каталоге
Компоненты Описание
View
производитель
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics