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2SJ205 Даташит - Renesas Electronics

2SJ205 image

Номер в каталоге
2SJ205

Компоненты Описание

Other PDF
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PDF
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page
7 Pages

File Size
536.6 kB

производитель
Renesas
Renesas Electronics 

DESCRIPTION
   The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply.
   As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.


FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
   high input impedance.
• Possible to reduce the number of parts by omitting the bias
   resistor.
• Has low on-state resistance
   RDS(on) = 5.0 Ω MAX. VGS = - 2.5 V, ID = - 10 mA
   RDS(on) = 3.0 Ω MAX. VGS = - 4 V, ID = - 0.3 A


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