2SJ201 Даташит - Toshiba
производитель
Toshiba
High-Power Amplifier Application
High breakdown voltage : VDSS= −200 V
High forward transfer admittance : |Yfs| = 5.0 S (typ.)
Complementary to 2SK1530
Номер в каталоге
Компоненты Описание
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производитель
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor ( Rev : 2007 )
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
