P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

   The 2SJ180, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
   As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids.

FEATURES
• Directly driven by ICs having a 5 V power supply.
• Has low on-state resistance
   RDS(on) = 1.5 Ω MAX. @VGS = -4.0 V, ID = -0.5 A
   RDS(on) = 1.0 Ω MAX. @VGS = -10 V, ID = -0.5 A
• Voltage drive at logic level (VGS = -4 V) is possible.
• Bidirectional zener diode for protection is incorporated in between the gate and the source.
• Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.