2SD389 Даташит - ETC
производитель

ETC
[Iscsemi]
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
• Wide Area of Safe Operation
• High Power Dissipation
APPLICATIONS
• Designed for medium power amplifier applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor