2SD288 Даташит - Kwang Myoung I.S. CO.,LTD
производитель

Kwang Myoung I.S. CO.,LTD
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 55V (MIN)
• Collector Power Dissipation-
: Pc = 25W(Max)@ Tc =25°C
APPLICATIONS
• Designed for power regulator, low frequency high power amplifier applications.
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Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor