2SD2582 Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
FEATURES
• Low VCE(sat)
VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA)
• High DC Current Gain
hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)
Page Link's:
1
2
3
4
5
6
7
8
Номер в каталоге
Компоненты Описание
View
производитель
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS
NEC => Renesas Technology
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
NEC => Renesas Technology
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS
NEC => Renesas Technology
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER
NEC => Renesas Technology
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics