2SD2536(2003) Даташит - Toshiba
производитель

Toshiba
Switching Applications
Micro Motor Drive, Hammer Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.2 V (max)
(IC = 0.7 A, VBH = 4.2 V)
• Zener diode included between collector and base
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Unspecified
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba