2SD2275 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
• High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V)
• Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) B
• Complement to Type 2SB1502
APPLICATIONS
• Designed for power amplification.
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производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.