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2SD2275 Даташит - Inchange Semiconductor

2SD2275 image

Номер в каталоге
2SD2275

Компоненты Описание

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2 Pages

File Size
79.9 kB

производитель
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
• High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V)
• Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) B
• Complement to Type 2SB1502


APPLICATIONS
• Designed for power amplification.

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Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
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Unspecified
Silicon NPN Darlington Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.

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