Номер в каталоге
2SD2130
Компоненты Описание
Other PDF
no available.
PDF
page
5 Pages
File Size
152.8 kB
производитель
Toshiba
2SD2130 Даташит - Toshiba
Toshiba
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
● Zener diode included between collector and base.
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba
Share Link: 