Low Feq. Power Amp.

Triple Diffused Planar NPN Silicon Transistor

FEATUREs
1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
2) Excellent current characteristics of DC current gain.
3) Large collector power dissipation: PC=30W(TC=25℃)
4) Complementary pair with 2SB1187