DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 200V(Min)
• High DC Current Gain
   : hFE= 1000(Min) @ IC= 10A, VCE= 3V
• Fast Switching Speed
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Designed for low frequency power amplifier and high
   current switching applications.