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2SD1508
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2SD1508(2006) Даташит - Toshiba
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Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Номер в каталоге
Компоненты Описание
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производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
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