Номер в каталоге
2SD1506
Компоненты Описание
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производитель
ETC
2SD1506 Даташит - ETC
ETC
[ROHM]
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor
FEATUREs
1) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) IC/iB=2A/0.2A
2) ASO is wide and resistant to breakdown.
3) Complementary pair with 2SB1065.
4) Easy installation into radiators.
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Номер в каталоге
Компоненты Описание
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производитель
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
California Eastern Laboratories.
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