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2SD1414 Даташит - Inchange Semiconductor

2SD1414 image

Номер в каталоге
2SD1414

Компоненты Описание

Other PDF
  V2  

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page
2 Pages

File Size
189.7 kB

производитель
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 80V(Min)
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain
   : hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1024
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.


Номер в каталоге
Компоненты Описание
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производитель
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Unspecified
Silicon NPN Darlington Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.

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