HOME >>> Shenzhen SPTECH Microelectronics Co., Ltd. >>>
2SD1413 PDF
2SD1413 Даташит - Shenzhen SPTECH Microelectronics Co., Ltd.
производитель

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A
• High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1023
APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.
Номер в каталоге
Компоненты Описание
View
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.