2SD1412 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min)
• Complement to Type 2SB1019
APPLICATIONS
• High current switching applications.
• Power amplifier applications.
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Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor