2SD1314 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
• High Speed Switching
• Low Collector Saturation Voltage
APPLICATIONS
• High power amplifier applications.
• High power switching applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor