Номер в каталоге
2SD1222
Компоненты Описание
Other PDF
PDF
page
4 Pages
File Size
169.8 kB
производитель
Toshiba
2SD1222(1999) Даташит - Toshiba
Toshiba
SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
POWER AMPLIFIER APPLICATIONS
• High DC Current Gain: hFE = 2000 (Min.) (VCE = 2 V, IC = 1 A)
• Low Saturation Voltage: VCE (sat) = 1.5 V (Max.) (IC = 2 A)
• Complementary to 2SB907.
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Share Link: 