2SD1221(1999) Даташит - Toshiba
производитель

Toshiba
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
• Low Collector Saturation Voltage : VCE (sat) = 0.4 V (Typ.) (IC = 3 A, IB = 0.3 A)
• High Power Dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SB906
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba