Номер в каталоге
2SD1117
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Inchange Semiconductor
2SD1117 Даташит - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A
• Wide Area of Safe Operation
• Complement to Type 2SB850
APPLICATIONS
• Designed for audio amplifier, series regulators and general purpose power amplifiers.
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