Номер в каталоге
2SC5336
Компоненты Описание
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6 Pages
File Size
47.6 kB
производитель
NEC => Renesas Technology
2SC5336 Даташит - NEC => Renesas Technology
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
• High gain | S21|2= 12 dB TYP, @f = 1 GHz, VCE= 10 V, Ic = 20 mA
• New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357
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