2SC5201(2009) Даташит - Toshiba
производитель
Toshiba
High-Voltage Switching Applications
• High breakdown voltage: VCEO = 600 V
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
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производитель
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
Toshiba
