Номер в каталоге
2SC5178
Компоненты Описание
Other PDF
no available.
PDF
page
12 Pages
File Size
61.3 kB
производитель
NEC => Renesas Technology
2SC5178 Даташит - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Low current consumption and high gain
|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
Номер в каталоге
Компоненты Описание
View
производитель
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semiconductor
Share Link: 