2SC3969 Даташит - ROHM Semiconductor
производитель
ROHM Semiconductor
Features
1) Low VCE(sat).
VCE(sat) = 0.15V (Typ.)
(IC / IB = 1A / 0.2A)
2) High breakdown voltage.
VCEO = 400V
3) Fast switching.
tr = 1.0µs
(IC = 0.8A)
Structure
Three-layer, diffused planar type
NPN silicon transistor
Номер в каталоге
Компоненты Описание
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производитель
High-voltage Switching Transistor (−400V, −2A) ( Rev : RevA )
ROHM Semiconductor
High voltage switching transistor (400V, 2A)
ROHM Semiconductor
High-voltage Switching Transistor (−400V, −2A) ( Rev : RevB )
ROHM Semiconductor
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR
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High-voltage Switching Transistor (-400V, -0.5A) ( Rev : Rev_A )
ROHM Semiconductor
High-voltage Switching Transistor (-400V, -0.5A)
ROHM Semiconductor
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Diodes Incorporated.
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 ( Rev : 2012 )
Diodes Incorporated.
Contact Form: 2a Load Voltage: 400V Maximum ( Rev : V2 )
Coto Technology
Contact Form: 2A Load Voltage: 400V Maximum
Coto Technology
