2SC3835 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and general purpose applications
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor