2SC3673 Даташит - Toshiba
производитель

Toshiba
Switching Applications
Solenoid Drive Applications
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Номер в каталоге
Компоненты Описание
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производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba