High hFE, Low-Frequency General-Purpose Amplifier Applications

FEATUREs
• Adoption of FBET process.
• High DC current gain (hFE=500 to 2000).
• High breakdown voltage (VCEO≥100V).
• Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
• High VEBO (VEBO≥15V).
• Small Cob (Cob=1.8pF typ).

APPLICATIONs
• AF amplifier, various driver, muting circuit.