2SC2460 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• High Current Capability
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
• Complement to Type 2SA1050
APPLICATIONS
• Designed for power amplifer and general purpose
applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor