2SC2261 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• High Power Dissipation- : Pc= 80W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage- :V(BR)CEo=120V(Min.)
• Complement to Type 2SA981
APPLICATIONS
• Designed for general purpose applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor