2SC2260 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• High Power Dissipation- : Pc= 80W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage- : V(BR)CEo= 100V(Min.)
• Complement to Type 2SA980
APPLICATIONS
• Designed for general purpose applications.
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Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor