2SB883 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE = 2000(Min)@ lc=-7A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
:VCE(sal)=-1.5V(Max)@lc=-7A
• Complement to Type 2SD1193
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
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производитель
Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor