2SB565 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• Low Collector Saturation Voltage
: VCE(sat)=-1.0(V)(Max)@lc=-2A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO== -50V(Min)
APPLICATIONS
• Designed for low frequency power amplifier and power
switching applications.
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производитель
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