2SB555 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
• High Power Dissipation-
: Pc= 80W(Max)@Tc=25°C
• Complement to Type 2SD425
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for SOW high-fidelity audio frequency
amplifier output stage.
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