Номер в каталоге
2SB552
Компоненты Описание
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New Jersey Semiconductor
2SB552 Даташит - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO=-180V(Min)
• High Power Dissipation- : Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD552
APPLICATIONS
• High power amplifier applications.
• High power switching applications.
• DC-DC converter and regulator applications.
Номер в каталоге
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