2SB1558 Даташит - Toshiba
производитель

Toshiba
Power Amplifier Applications
• High breakdown voltage: VCEO = −140 V (min)
• Complementary to 2SD2387
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производитель
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
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TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba