2SB1411 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-100V(Min)
• High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V, lc= -1A)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA)
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications
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производитель
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Inchange Semiconductor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor