Номер в каталоге
2SB1375
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производитель
New Jersey Semiconductor
2SB1375 Даташит - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Collector Power Dissipation-
: Pc= 25 W@ Tc= 25°C
• Low Collector SaturationVoltage-
: VCE(sat)- -1.5V(Max)@ (|c= -2A, IB= -0.2A)
• Complement to Type 2SD2012
APPLICATIONS
• Designed for audio frequency power amplifier applications.
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