2SB1367 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-100V(Min)
• Collector Power Dissipation-
: Pc= 30W@ Tc= 25C
• Low Collector Saturation Voltage-
: VCE<M)= -2.0V(Max)@ (lc= -4A, IB= -0.4A)
• Complement to Type 2SD2059
APPLICATIONS
• Designed for general purpose applications.
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производитель
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor