2SB1260(2012) Даташит - ROHM Semiconductor
производитель
ROHM Semiconductor
Features
1) Hight breakdown voltage and high current. BVCEO= −80V, IC = −1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1733.
Номер в каталоге
Компоненты Описание
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производитель
Power Transistor(80V,1A)
Galaxy Semi-Conductor
Power Transistor(-80V,-1A)
Galaxy Semi-Conductor
Power Transistor (80V, 1A)
ROHM Semiconductor
Power Transistor (−80V, −1A)
ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : 2011 )
ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : Rev1_0 )
ROHM Semiconductor
TRANS PNP 80V 1A TO-92
ON Semiconductor
Power Transistor (80V, 7A)
ROHM Semiconductor
Power Transistor (80V, 4A)
ROHM Semiconductor
2SB1644Power Transistor ( -80V, -4A), 2SB1551 Power Transistor ( -80V, -10A)
ROHM Semiconductor
