Номер в каталоге
2SB1161
Компоненты Описание
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производитель
New Jersey Semiconductor
2SB1161 Даташит - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1716
APPLICATIONS
• Designed for high power amplifier applications
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