2SA2060(2013) Даташит - Toshiba
производитель
Toshiba
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.3 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)
• High-speed switching: tf = 90 ns (typ.)
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2002 )
Toshiba
