Номер в каталоге
2SA2005E
Компоненты Описание
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производитель
ROHM Semiconductor
2SA2005E Даташит - ROHM Semiconductor
ROHM Semiconductor
Features
1) Electrical characteristics of DC current gain hFE is flat.
2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA)
3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz)
4) Wide SOA.
APPLICATIONs
Power amplifier
Velosity modulation
Structure
PNP Silicon Epitaxial Planar Transistor
Номер в каталоге
Компоненты Описание
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производитель
For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)
ROHM Semiconductor
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