2SA1759_ Даташит - ROHM Semiconductor
производитель

ROHM Semiconductor
Features
1) High breakdown voltage. (BVCEO= −400V)
2) Low saturation voltage,
typically VCE (sat)= −0.2V at IC / IB= −20mA / −2mA.
3) High switching speed, typically tf = 1µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SC4505.
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Компоненты Описание
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производитель
High-voltage Switching Transistor (Telephone power supply)(-400V, -0.5A)
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High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
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High-voltage Switching Transistor (Telephone power supply)
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Power Transistor (400V, 0.1A)
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Power Transistor (400V, 0.1A)
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High-voltage Switching Transistor (−400V, −2A) ( Rev : RevA )
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High voltage switching transistor (400V, 2A) ( Rev : RevA )
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400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR
Diodes Incorporated.
High-voltage Switching Transistor (-400V, -0.5A) ( Rev : Rev_A )
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High voltage switching transistor (400V, 2A)
ROHM Semiconductor